½
DIODE
FEATURES
Type :
10EDB10
1A 100V Tj =150
°
C
OUTLINE DRAWING
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
Approx Net Weight:0.17g
10EDB10
100
50Hz
Half Sine Wave
Resistive Load
Ta=39°C *1
Ta=26°C *2
1.0
0.9
1.57
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
45
Unit
V
A
A
A
°C
°C
Electrical
•
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Symbol
I
RM
V
FM
Conditions
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
10
1.0
110
140
Unit
µA
V
°C/W
Tj= 25°C, V
RM
= V
RRM
Tj= 25°C, I
FM
= 1.0A
Junction to P.C. Board mounted*1
Thermal Resistance
Rth(j-a)
Ambient
Without Fin *2
*1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)
*2: Without Fin or P.C. Board mounted
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
