Nexperia
PESD6V3S1UL
Unidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
6.3
V
VBR
IRM
Cd
breakdown voltage
IR = 5 mA; Tamb = 25 °C
7.1
7.6
60
7.9
300
105
-
V
reverse leakage current VRWM = 6.3 V; Tamb = 25 °C
-
-
-
-
nA
pF
V
diode capacitance
clamping voltage
f = 1 MHz; VR = 0 V; Tamb = 25 °C
82
VCL
IPP = 1.3 A; tp = 8/20 µs; Tamb = 25 °C
[1]
[1]
8.1
13.4
IPPM = 10.4 A; tp = 8/20 µs;
Tamb = 25 °C
-
V
IPP = 16 A; tp = 100 ns; Tamb = 25 °C
[2]
-
14.2
-
V
[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008
aaa-033880
I
90
C
d
(pF)
70
- V
- V
- V
RWM
V
CL
BR
- I
- I
RM
R
50
30
-
+
P-N
0
1
2
3
4
5
6
R
7
- I
PP
V
(V)
- I
PPM
006aab324
f = 1 MHz; Tamb = 25 °C
Fig. 3. V-I characteristics for a bidirectional ESD
protection diode
Fig. 4. Diode capacitance as a function of reverse
voltage; typical values
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PESD6V3S1UL
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Nexperia B.V. 2022. All rights reserved
Product data sheet
14 September 2022
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