Nexperia
PESD5V0S1BLD-Q
Bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
VBR
IRM
Cd
breakdown voltage
IR = 1 mA; Tamb = 25 °C
5.5
-
9.5
100
45
10
14
-
V
reverse leakage current VRWM = 5 V; Tamb = 25 °C
-
-
-
-
-
-
5
nA
pF
V
diode capacitance
clamping voltage
f = 1 MHz; VR = 0 V; Tamb = 25 °C
IPP = 1 A; tp = 8/20 μs; Tamb = 25 °C
35
-
VCL
[1] [2]
IPPM = 12 A; tp = 8/20 μs; Tamb = 25 °C [1] [2]
-
V
Rdyn
dynamic resistance
IR = 10 A; tp = 100 ns; Tamb = 25 °C
IR = -10 A; tp = 100 ns; Tamb = 25 °C
[2] [3]
[2] [3]
0.1
0.15
Ω
-
Ω
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI/ESD STM5.5.1-2008.
001aaa202
001aaa633
3
10
1.2
P
PP
P
PP(25°C)
P
PP
(W)
0.8
2
10
0.4
10
0
2
3
4
1
10
10
10
10
0
50
100
150
200
t
(µs)
T (°C)
j
p
Tamb = 25 °C
Fig. 5. Relative variation of peak pulse power as a
function of junction temperature; typical values
Fig. 4. Peak pulse power as a function of exponential
pulse duration; typical values
©
PESD5V0S1BLD-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
4 October 2022
4 / 12
NEXPERIA [ Nexperia ]
