RoHS
8T Series RoHS
SEMICONDUCTOR
Fig.4 On-state characteristics (maximum values).
Fig.5 Surge peak on-state current versus number
of cycles.
ITM (A)
ITSM (A)
100
90
Tj=Tj max
Tj max.
Vto = 0.85 V
Rd = 50 mΩ
80
70
60
50
40
30
20
10
0
t=20ms
One cycle
Non repetitive
Tj initial=25°C
10
1
Repetitive
Tc=100°C
Tj=25°C
VTM(V)
Number of cycles
0.5 1.0
1.5
2.0 2.5
3.0
3.5
4.0
4.5 5.0
1
10
100
1000
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lTSM (A), l2t(A2s)
j
j
lGT,lH,lL[T ] / lGT,lH,lL [T =25°C]
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
Tj initial=25°C
IGT
dI/dt limitation:
50A/µs
ITSM
IH & IL
I2t
Tj(°C)
tp (ms)
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120 140
Fig.8-2 Relative variation of critical rate of
Fig.8-1 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
decrease of main current versus (dV/dt)c
(typical values). Standard Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
TW
C
B
CW/BW
SW
(dV/dt)c (V/µs)
(dV/dt)c (V/µs)
0.2
0.0
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
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