RoHS
6T Series RoHS
SEMICONDUCTOR
Fig.5 Surge peak on-state current versus number
of cycles.
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
I
(A)
TSM
I
(A), I2t (A2s)
TSM
70
60
50
40
30
20
10
0
1000
100
10
Tj initial=25°C
t=20ms
One cycle
dI/dt limitation:
50A/µs
Non repetitive
j
ITSM
T
initial=25°C
Repetitive
=105°C
T
c
2
I t
Number of cycles
tp(ms)
1
10
100
1000
0.01
0.10
1.00
10.00
Fig.8 Relative variation of critical rate of decrease
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
I
,I ,I [T ] / I ,I ,I [T =25°C ]
GT
H
L
j
GT
H
L
j
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
2.0
1.5
1.0
0.5
0.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IGT
TW
BW/CW
I
H
& IL
SW
(dV/dt)c (V/µs)
Tj(°C)
0.1
1.0
10.0
100.0
-40
-20
0
20
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of decrease
Fig.10 Relative variation of critical rate decrease of
main current versus junction temperature .
of main current versus (dV/dt)C (typical values)
(Standard types).
(dI/dt)c [T ] / (dI/dt)c [T specified]
j
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
j
6
5
4
3
2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
C
B
1
(dV/dt)c (V/µs)
Tj(°C)
0
0.1
1.0
10.0
100.0
0
25
50
75
100
125
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