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26T06A-BW 参数 Datasheet PDF下载

26T06A-BW图片预览
型号: 26T06A-BW
PDF下载: 下载PDF文件 查看货源
内容描述: 三端双向可控硅, 25A Sunbberless和标准 [TRIACs, 25A Sunbberless and Standard]
分类和应用: 可控硅三端双向交流开关
文件页数/大小: 6 页 / 850 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
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RoHS  
26T Series RoHS  
SEMICONDUCTOR  
TRIACs, 25A  
Sunbberless and Standard  
FEATURES  
High current triac  
Low thermal resistance with clip bonding  
A2  
Low thermal resistance insulation ceramic  
for insulated TO-220AB & TO-3P package  
1
A1  
A2  
2
High commutation (4 quadrant) or very  
High commutation (3 quadrant) capability  
3
G
TO-220AB (non-Insulated)  
TO-220AB (lnsulated)  
26T series are UL certified (File ref: E320098)  
Packages are RoHS compliant  
(26TxxA)  
(26TxxAI)  
APPLICATIONS  
A2  
Applications include the ON/OFF function in  
applications such as static relays, heating  
regulation, induction motor starting circuits,  
etc., or for phase control operation in light  
dimmers, motor speed controllers, and silmilar.  
A1  
A2  
G
A1  
A2  
G
The snubberless versions are especially  
recommended for use on inductive loads,  
due to their high commutation performances.  
The 26T series provides an insulated tab  
(rated at 2500VRMS).  
TO-3P (non-Insulated)  
TO-3P (Insulated)  
(26TxxB)  
(26TxxBI)  
A2  
MAIN FEATURES  
SYMBOL  
VALUE  
UNIT  
A
A1  
A2  
IT(RMS)  
G
25  
TO-263 (D2PAK)  
VDRM/VRRM  
IGT(Q1)  
V
600 to 1200  
35 to 50  
(26TxxH)  
mA  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
UNIT  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
Tc = 105ºC  
TO-3P  
IT(RMS)  
RMS on-state current (full sine wave)  
Tc = 100ºC  
Tc = 75ºC  
t = 20 ms  
t = 16.7 ms  
TO-263/TO-220AB/TO-3P insulated  
TO-220AB insulated  
F =50 Hz  
25  
A
250  
260  
340  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
F =60 Hz  
I2t  
I2t Value for fusing  
A2s  
t
= 10 ms  
p
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
Tj =125ºC  
Tj =125ºC  
A/µs  
F =100 Hz  
50  
dI/dt  
Tp =20 µs  
Tj =125ºC  
Peak gate current  
IGM  
4
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
Storage temperature range  
- 40 to + 150  
- 40 to + 125  
ºC  
Operating junction temperature range  
www.nellsemi.com  
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