RoHS
25PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 25A
Main Features
2
Symbol
Value
25
Unit
IT(RMS)
A
1
2
1
2
3
3
VDRM/VRRM
IGT
V
600 to 1600
4 to 40
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
mA
(25PTxxA)
(25PTxxAI)
A2
DESCRIPTION
2
(A2)
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
A1
A2
G
TO-263 (D2PAK)
(G)3
1(A1)
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
(25PTxxH)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=100°C
TO-263/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
A
A
25
TO-220AB insulated
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
Tc=83°C
Tc=100°C
Tc=83°C
t = 20 ms
t = 16.7 ms
Average on-state current
(180° conduction angle)
IT(AV)
16
300
314
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
450
50
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
IGM
Tj = 125ºC
Tp = 20 µs
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
Tp =20µs
Maximum gate power
PGM
W
W
PG(AV)
Average gate power dissipation
Repetitive peak off-state voltage
Tj =125ºC
Tj =125ºC
VDRM
VRRM
Tstg
600 to 1600
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
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