RoHS
RoHS
16T Series
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
16Txxxx
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
C
B
25
50
50
I - II - III
(1)
IGT
MAX.
mA
VD = 12 V, RL = 33Ω
IV
100
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
(2)
mA
IH
MAX.
MAX.
25
50
I - III - IV
40
60
IL
IG = 1.2 IGT
mA
80
120
II
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c = 7 A/ms, Tj = 125°C
V/µs
V/µs
MIN.
MIN.
200
5
400
10
(dV/dt)c(2)
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
25
(2)
ITM = 22.5 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
1
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB, D²PAK
TO-220AB Insulated
D²PAK
1.2
2.1
45
60
Rth(j-c)
Rth(j-a)
Junction to case (AC)
°C/W
S(1)=1cm²
Junction to ambient
°C/W
TO-220AB Insulated, TO-220AB
Note 1: S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA
50 mA
25 mA
35 mA
10 mA
10 mA
35 mA
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D²PAK
16TxxA-B/16TxxAl-B
16TxxA-BW/16TxxAl-BW
16TxxA-C/16TxxAl-C
Snubberless
Standard
Snubberless
Logic level
Logic level
16TxxA-CW/16TxxAl-CW
16TxxA-SW/16TxxAl-SW
16TxxH-SW
16TxxH-CW
Snubberless
D²PAK
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