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OD-08JT58CS 参数 Datasheet PDF下载

OD-08JT58CS图片预览
型号: OD-08JT58CS
PDF下载: 下载PDF文件 查看货源
内容描述: 高精度,低功耗,快速热身SC切割OCXO在20×20 mm的通孔封装 [Precision, Low Power Consumption, Fast Warm-up SC-cut OCXO in 20x20 mm Through Hole Package]
分类和应用: 石英晶振恒温晶体振荡器
文件页数/大小: 3 页 / 38 K
品牌: NEL [ NEL FREQUENCY CONTROLS,INC ]
 浏览型号OD-08JT58CS的Datasheet PDF文件第1页浏览型号OD-08JT58CS的Datasheet PDF文件第3页  
Data Sheet 0635H  
CRYSTAL OSCILLATORS  
OD-X8JXXXXX Series  
Parameter  
Symb  
Condition  
Min  
Typ  
Max  
Unit  
Note  
Absolute Maximum Ratings  
Vcc  
-0.5  
5.5  
V
Input Break  
Down Voltage  
Ts  
-40  
-1  
85  
7
Storage temper.  
°C  
V
Vc  
Control Voltage  
Electrical  
F
F/F  
8
10.000  
±50  
160  
2
MHz  
ppb  
ppb/V  
1*  
Frequency  
Frequency stability  
vs. Temp.  
vs. Supply  
per day  
per year  
.1s to 10s  
1Hz  
10 Hz  
100 Hz  
1 KHz  
10 KHz  
See chart below  
1
5E-10  
1E-7  
1E-11  
after 30 days  
5E-8 available2*  
Aging  
Allan Variance  
SSB Phase Noise  
-90  
dBc/Hz  
3*  
-120  
-150  
-153  
-160  
After 30 minutes  
worst direction  
±10  
±1.0  
5.25  
3.45  
0.15  
ppb  
ppb/G  
V
Retrace  
G-sensitivity  
Input Voltage  
Vcc  
P
4.75  
3.15  
5.0  
3.3  
0.125  
0.35  
0.5  
See chart below to specify  
steady state, 25°C  
steady state, -30°C  
start-up @ -30°C  
Subharmonics  
Spurious  
W
Standard Operating  
Temperature, for Op  
Temp. 85 °C ad 20%  
At Higher Frequencies  
Power consumption  
Spectral Purity  
0.7  
-45  
-80  
-30  
-50  
dBc  
Harmonics/Sine  
-35  
10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave)  
Load  
to 0.1ppm accuracy  
30  
45  
s
Warm-up time  
Output Waveform  
Control voltage  
Pull range  
Deviation slope  
Setability  
τ
3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm  
Vc  
0
±0.5  
Vref  
V
ppm  
ppm/V  
V
from nominal F  
Monotonic, posit  
@25°C, Fnom.  
±1  
0.4  
Vc0  
Vref/2-1 Vref/2 Vref/2+1  
Environmental and Mechanical  
Operating temp. range  
Mechanical Shock  
Vibration  
-30°C to 70°C Standard, Other options – see chart below  
Per MIL-STD-202, 30G, 11ms  
Per MIL-STD-202, 5G to 2000 Hz  
260°C for 10s Max leads only  
Soldering Conditions  
Electrical Connections  
Pin Out  
Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND;  
Notes:  
1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic  
multiplication. Both methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important  
– high frequency crystal will be used. If phase noise close to the carrier and aging are more important – multiplication will be  
used. Please consult factory for your specific requirement.  
2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication.  
Keep it in mind while specifying aging.  
3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency  
the phase noise roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency  
offset range. If higher frequency is achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to  
the lower Q of the crystal and is usually worse, compared to multiplied solution. On the noise floor, however it remains more or  
less the same. This design usually starts utilizing multiplication techniques in the range of 25 MHz to 35 MHz.  
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881  
Email: nelsales@nelfc.com www.nelfc.com