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UPD43256BCZ-70LL 参数 Datasheet PDF下载

UPD43256BCZ-70LL图片预览
型号: UPD43256BCZ-70LL
PDF下载: 下载PDF文件 查看货源
内容描述: 256K - BIT的CMOS静态RAM的32K字×8位 [256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 24 页 / 174 K
品牌: NEC [ NEC ]
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µPD43256B  
DC Characteristics (Recommended operating conditions unless otherwise noted) (1/2)  
µPD43256B-L  
µPD43256B-LL  
Parameter  
Symbol  
Test conditions  
Unit  
MIN. TYP. MAX. MIN. TYP. MAX.  
Input leakage current  
I/O leakage current  
ILI  
VIN = 0 V to VCC  
–1.0  
–1.0  
+1.0 –1.0  
+1.0 –1.0  
+1.0 µA  
+1.0 µA  
ILO  
VI/O = 0 V to VCC  
OE = VIH or CS = VIH or WE = VIL  
Operating supply current  
ICCA1  
CS = VIL, Minimum cycle time,  
II/O = 0 mA  
45  
45  
mA  
ICCA2  
ICCA3  
CS = VIL, II/O = 0 mA  
10  
10  
10  
10  
CS 0.2 V, Cycle = 1 MHz,  
II/O = 0 mA  
VIL 0.2 V, VIH VCC – 0.2 V  
Standby supply current  
High level output voltage  
Low level output voltage  
ISB  
ISB1  
CS = VIH  
3
3
mA  
µA  
V
CS VCC – 0.2 V  
IOH = –1.0 mA  
IOH = –0.1 mA  
IOL = 2.1 mA  
1.0  
50  
0.5  
15  
VOH1  
VOH2  
VOL  
2.4  
2.4  
VCC–0.5  
0.4  
VCC–0.5  
0.4  
V
Remarks 1. VIN: Input voltage  
2. These DC Characteristics are in common regardless of package types.  
7
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