5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
• SUPPLY VOLTAGE:
V
CC
= 4.5 to 5.5 V
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
• POWER GAIN:
UPC2711TB: G
P
= 13 dB TYP
UPC2712TB: G
P
= 20 dB TYP
20
UPC2711TB
UPC2712TB
TYPICAL PERFORMANCE CURVES
GAIN vs. FREQUENCY
25
UPC2712TB
Gain, GP (dB)
15
UPC2711TB
10
DESCRIPTION
The UPC2711TB and UPC2712TB are Silicon MMIC Wideband
Amplifiers manufactured using NEC's 20 GHz f
T
NESAT
TM
III
silicon bipolar process. These devices are designed for use as
buffer amps in DBS tuners. The UPC2711/12TB are pin
compatible and have comparable performance as the larger
UPC2711/12T, so they are suitable for use as a replacement
to help reduce system size. These IC's are housed in a 6 pin
super minimold or SOT-363 package.
NEC's stringent quality assurance and test procedure ensure
the highest reliability and performance.
5
0.5
1.0
1.5
2.0
2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= +25
°C,
V
CC
= 5.0 V, Z
L
= Z
S
= 50
Ω)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
P
f
U
∆G
P
P
O
(SAT)
NF
RL
IN
RL
OUT
ISOL
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Power Gain, f = 1 GHz
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 100 MHz)
Gain Flatness, f = 0.1 GHz to 2.5 GHz
Maximum Output Level, f = 1 GHz, P
IN
= 0 dBm
Noise Figure, f = 1 GHz
Input Return Loss, f = 1 GHz
Output Return Loss, f = 1 GHz
Isolation, f = 1 GHz
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
20
9
25
-2
MIN
9
11
2.7
UPC2711TB
S06
TYP
12
13
2.9
±0.8
+1
5
25
12
30
6.5
9
10
28
0
MAX
15
16.5
MIN
9
18
2.2
UPC2712TB
S06
TYP
12
20
2.6
±0.8
+3
4.5
12
13
33
6
MAX
15
23.5
California Eastern Laboratories