1.5 GHz SILICON MMIC UPC2710T
WIDE-BAND AMPLIFIER UPC2713T
FEATURES
• FREQUENCY RESPONSE:
1.5 GHz
• HIGH GAIN:
33 dB (UPC2710T)
Gain, G
S
(dB)
•
SATURATED OUTPUT POWER:
+13.5 (UPC2710T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
•
TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
Frequency, f (GHz)
DESCRIPTION
The UPC2710T and UPC2713T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require high
gain and wide-band operation. They are designed for low cost
gain stages in cellular radios, GPS receivers, DBS tuners,
PCN, and test/measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C,
f = 0.5 GHz, V
CC
= 5 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U
∆G
S
P
SAT
P
1dB
NF
RL
IN
RL
OUT
ISOL
∆G
T
R
TH
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 ~ 0.6 GHz
f = 0.1∼ 0.8 GHz
Saturated Output Power
Output Power at 1dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain -Temperature Coefficient
Thermal Resistance (Junction to Ambient)
UNITS
mA
dB
GHz
dB
dBm
dBm
dB
dB
dB
dB
dB/°C
°C/W
3
9
34
11
MIN
16
30
0.7
UPC2710T
T06
TYP
22
33
1.0
±0.8
13.5
7.5
3.5
6
12
39
-0.006
200
5
10
6
35
4
MAX
29
36.5
MIN
9
26
0.9
UPC2713T
T06
TYP
12
29
1.2
±0.8
7
-4
3.2
13
9
40
-0.016
200
4.5
MAX
15
33
California Eastern Laboratories