PS2532-1,-2,-4,PS2532L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
100
50
400
300
200
100
PS2532-1
PS2532L-1
PS2532-1
PS2532L-1
1.5 mW/˚C
PS2532-2, -4
PS2532L-2, -4
PS2532-2, -4
3.0 mW/˚C
PS2532L-2, -4
1.2 mW/˚C
2.4 mW/˚C
0
25
50
75
100
125
(˚C)
150
0
25
50
75
100
125
(˚C)
150
Ambient Temperature T
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
10
1
160
4.5 mA
T
A
= +100 ˚C
+75 ˚C
140
5.0 mA
4.0 mA
+50 ˚C
3.5 mA
3.0 mA
120
100
80
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
2.5 mA
2.0 mA
1.5 mA
1.0 mA
60
40
20
0.1
IF = 0.5 mA
0.01
0.6
0.8
1.0
1.2
1.4
(V)
1.6
0
1
2
3
4
5
6
7
8
Forward Voltage V
F
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10 µ
500
V
CE = 300 V
F = 5.0 mA
2.0 mA
1 µ
I
100
50
1.0 mA
100 n
10 n
1 n
10
5
1
0.5
100 p
0.1
0.0
–50
–25
0
25
50
75
100
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage VCE(sat) (V)
8