2SC4226
INSERTION POWER GAIN
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
24
20
16
12
8
15
10
5
V
CE = 3 V
V
CE = 3 V
f = 1 GHz
IC = 7 mA
4
0
0
0.5
0.1
0.2
0.5
1
2
5
1
5
10
50 100
Frequency f (GHz)
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
6
5
4
3
2
1
V
CE = 3 V
f = 1 GHz
0
0.5
1
5
10
50 100
Collector Current I
C
(mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10450EJ01V0DS
NEC [ NEC ]
