2SC3357
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
MIN.
TYP.
MAX.
1.0
UNIT
µA
TEST CONDITIONS
VCB = 10 V, IE = 0
ICBO
µA
IEBO
1.0
VEB = 1.0 V, IC = 0
hFE*
50
120
6.5
0.65
9
300
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
fT
GHz
pF
Cre**
1.0
3.0
2
S21e
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
NF
NF
1.1
1.8
dB
Noise Figure
dB
*
Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.
hFE Classification
Class
Marking
hFE
RH
RH
RF
RF
RE
RE
50 to 100
80 to 160
125 to 250
TYPICAL CHARACTERISTICS (TA = 25 °C)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
1
f = 1.0 MHz
2.0
Ceramic Substrate
16 cm2 × 0.7 mm
1.0
0.5
0.3
Free Air
R
th(j-a) 312.5 ˚C/W
0
50
100
150
0
0.5
1
2
5
10
20 30
TA-Ambient Temperature-°C
V
CB-Collector to Base Voltage-V
2
NEC [ NEC ]
