MBR20100CT
Pb-Free Product
NCE MOS Barrier Rectifier
Description
This Schottky rectifier has been optimized for low reverse leakage at
high temperature, this product special design for high forward and
reverse surge capability
Schematic diagram
General Features
●
V
RRM
●
IF
(AV)
100V
2 x 10 A
●
High frequency operation
●
Low forward voltage drop
●
Center tap package
●
Lead free product is acquired
●
High Junction Temperature
●
High ESD Protection, IEC Model
±10KV
●
High Forward & Reverse Surge capability
Marking and pin Assignment
Application
●
Power Supply
−
Output Rectification
●
Power Management
●
Instrumentation
TO-220 top view
Package Marking And Ordering Information
Device Marking
MBR20100CT
Device
MBR20100CT
Device Package
TO-220
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
Average Forward Current
Per diode
Per device
Symbol
VRRM
IF(AV)
IFSM
IRRM
TJ
Tstg
Limit
100
10
20
180
0.5
-50~150
-50~150
Unit
V
A
A
A
A
℃
℃
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
Peak Repetitive Reverse Surge Current(Tp=2us)
Maximum operation Junction Temperature Range
Storage Temperature Range
Wuxi NCE Power Semiconductor Co., Ltd
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NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
