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NT5CB256M16DP-FLB 参数 Datasheet PDF下载

NT5CB256M16DP-FLB图片预览
型号: NT5CB256M16DP-FLB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
READ Timing Definitions  
Read timing is shown in the following figure and is applied when the DLL is enabled and locked.  
Rising data strobe edge parameters:  
tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, .  
tDQSCK is the actual position of a rising strobe edge relative to CK, .  
tQSH describes the DQS,  differential output high time.  
tDQSQ describes the latest valid transition of the associated DQ pins.  
tQH describes the earliest invalid transition of the associated DQ pins.  
Falling data strobe edge parameters:  
tQSL describes the DQS,  differential output low time.  
tDQSQ describes the latest valid transition of the associated DQ pins.  
tQH describes the earliest invalid transition of the associated DQ pins.  
tDQSQ; both rising/falling edges of DQS, no tAC defined.  
READ Timing Definition  
Version 2.3  
02/2017  
51  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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