N64T1618CBB
Advance Information
NanoAmp Solutions, Inc.
cally loaded with default settings during power-up
and can be updated any time during normal opera-
tion. Special attention has been focused on
standby current consumption during self-refresh.
The N64T1618CBB device includes three system-
accessible mechanisms used to minimize standby
current. Partial Array Self Refresh (PASR) limits
refresh to only that part of the DRAM array that
contains essential data. Temperature Compen-
sated Refresh (TCR) is used to adjust the refresh
rate according to the ambient temperature. The
refresh rate can be decreased at lower tempera-
tures to minimize current consumption during
standby. Deep Power Down (DPD) halts the
refresh operation altogether and is used when no
vital information is stored in the device. These
three refresh mechanisms are adjusted through the
Refresh Configuration Register.
General Description
The N64T1618CBB is a 64Mb device organized as
4M x 16 bits. These devices include the industry
standard burst mode Flash interface that dramati-
cally increases read/write bandwidth when com-
pared with other low-power SRAM or Pseudo-
SRAM offerings. To operate seamlessly on a burst
Flash bus, a transparent self-refresh mechanism is
incorporated. The hidden refresh requires no addi-
tional support from the system memory controller
and has no significant impact on device read/write
performance. Two user-accessible control registers
define device operation. The Bus Configuration
Register (BCR) defines how the device interacts
with the system memory bus and is nearly identical
to its counterpart found on burst-mode Flash
devices. The Refresh Configuration Register
(RCR) is used to control how refresh is performed
on the DRAM array. These registers are automati-
Figure 1. Functional Block Diagram
A[21-0]
Address Decode
Logic
Input/
Output
Mux
4,096Kx 16
Refresh Configuration
Register
I/O0 - I/O7
DRAM
MEMORY
ARRAY
and
Buffers
Bus Configuration
Register
I/O8 - I/O15
CE#
WE#
OE#
CLK
Control
Logic
ADV#
CRE
WAIT
LB#
UB#
Stock No. 23310-H 1/05
This is an ADVANCE DATASHEET and subject to change without notice.
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