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N16T1630C2BZ-70 参数 Datasheet PDF下载

N16T1630C2BZ-70图片预览
型号: N16T1630C2BZ-70
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mb的超低功耗异步SRAM CMOS [16Mb Ultra-Low Power Asynchronous CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 239 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Ordering Information  
N16T1630C2B  
N16T1630C2BX(x)-XXI  
55 = 55ns  
70 = 70ns  
Performance  
Package  
Z = BGA  
Z2 = Green BGA  
Revision History  
Revision  
Date  
Change Description  
A
January 2003  
Initial Preliminary Release  
Corrected typo for Ioh and Iol  
Increased Isb to 100uA at 3V  
B
August 2003  
C
D
E
F
September 2003  
March 2004  
August 2004  
January 2005  
Add test conditions  
Remove TSOP Package  
Changed ball(E3) from Vss to NC  
Added Green package offering  
© 2004, 2005 NanoAmp Solutions, Inc. All rights reserved.  
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.  
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-  
poses only and they vary depending upon specific applications.  
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application  
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp  
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.  
(DOC#14-02-007 REV F ECN# 01-1103)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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