NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N16T1630C1C
Advance Information
16Mb Ultra-Low Power Asynchronous CMOS PSRAM
1M x 16 bit
Overview
The N16T1630C1C is an integrated memory
device containing a 16 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 1,048,576 words by 16 bits. It is
designed to be identical in operation and interface
to standard 6T SRAMS. The device is designed for
low standby and operating current and includes a
power-down feature to automatically enter standby
mode. Also included are several other power
saving modes: a deep sleep mode where data is
not retained in the array and partial array refresh
mode where data is retained in a portion of the
array. Both these modes reduce standby current
drain. The device can operate over a very wide
temperature range of -25
o
C to +85
o
C.
Features
• Dual voltage for Optimum Performance:
Vccq - 2.7V to 3.3V
Vcc - 2.7V to 3.3V
• Fast Cycle Times
T
ACC
< 60 nS
• Very low standby current
I
SB
< 120µA
• Very low operating current
Icc < 25mA
• Dual rail operation
V
CCQ
and V
SSQ
for separate I/O power rail
Product Family
Part Number
Package
Type
Operating
Temperature
-25
o
C
+85
o
C
Power
Supply
Speed
70ns
65ns
60ns
Standby
Operating
Current (I
SB
), Current (Icc),
Max
Max
120
µA
3 mA @ 1MHz
N16T1630C1CZ
48BGA
to
2.7V - 3.3V
Pin Configuration
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
Pin Descriptions
3
A
0
A
3
A
5
A
17
NC
A
14
A
12
A
9
2
OE
UB
I/O
10
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
ZZ
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
Pin Name
A
0
-A
19
WE
CE
ZZ
OE
LB
UB
I/O
0
-I/O
15
V
CC
V
SS
V
CCQ
V
SSQ
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Deep Sleep Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O only
Ground I/O only
V
SSQ
I/O
11
V
CCQ
I/O
12
I/O
14
I/O
13
I/O
15
A
18
A
19
A
8
48 Pin BGA (top)
6 x 8 mm
Stock No. 23339 A 3/04
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NANOAMP [ NANOAMP SOLUTIONS, INC. ]
