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N08T1630C2BZ 参数 Datasheet PDF下载

N08T1630C2BZ图片预览
型号: N08T1630C2BZ
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512Kx16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 254 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Ball Grid Array Package
A1 BALL PAD
CORNER (3)
D
0.23±0.05
0.90±0.10
N08T1630CxB
1. 0.30±0.05 DIA.
E
2. SEATING PLANE - Z
0.15 Z
0.08
TOP VIEW
SIDE VIEW
1. DIMENSION IS MEASURED AT THE
A1 BALL PAD
MAXIMUM SOLDER BALL DIAMETER.
CORNER
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
Z
SD
e
SE
BOTTOM VIEW
Dimensions (mm)
e = 0.75
D
6±0.10
E
SD
8±0.10
0.375
SE
0.375
J
1.125
K
1.375
BALL
MATRIX
TYPE
FULL
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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