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N08L1618C2AB2 参数 Datasheet PDF下载

N08L1618C2AB2图片预览
型号: N08L1618C2AB2
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512K × 16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 253 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N08L1618C2A
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
AW
CE1
t
CW
CE2
t
LBW
, t
UBW
LB, UB
t
AS
WE
t
DW
High-Z
Data In
t
WHZ
Data Out
High-Z
t
DH
t
WP
t
WR
Advance Information
Data Valid
t
OW
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
AW
CE1
(for CE2 Control, use
inverted signal)
LB, UB
t
WP
WE
t
DW
Data In
t
LZ
Data Out
t
WHZ
t
DH
t
CW
t
AS
t
LBW
, t
UBW
t
WR
Data Valid
High-Z
(DOC#14-02-019 REV F ECN# 01-1280)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8