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N04Q1625C2BW-15I 参数 Datasheet PDF下载

N04Q1625C2BW-15I图片预览
型号: N04Q1625C2BW-15I
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM CMOS瓦特/双Vcc和VCCQ的终极功率降低256K 】 16位POWER SAVER技术 [4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 300 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N04Q16yyC2B  
NanoAmp Solutions, Inc.  
Advance Information  
Power Savings with Page Mode Operation (WE = V )  
IH  
Page Address  
Open page  
(A0, A5-A17)  
Word Address  
...  
Word 16  
Word 1  
Word 2  
(A1-A4)  
CE1  
CE2  
OE  
LB, UB  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 16-bit words of data are read from the open page. By treating addresses A1 - A4 as the least  
significant bits and addressing the 16 words within the open page, power is reduced to the page mode  
value which is considerably lower than standard operating currents for low power SRAMs.  
Stock No. 23451-B 2/06  
The specification is ADVANCE INFORMATION and subject to change without notice.  
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