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N04Q1618C2BB-70I 参数 Datasheet PDF下载

N04Q1618C2BB-70I图片预览
型号: N04Q1618C2BB-70I
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM CMOS瓦特/双Vcc和VCCQ的终极功率降低256K 】 16位POWER SAVER技术 [4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 300 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N04Q16yyC2B  
NanoAmp Solutions, Inc.  
Functional Block Diagram  
Advance Information  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
(A1 - A4)  
Input/  
Address  
Inputs  
Page  
4Mb  
Output  
Mux  
I/O0 - I/O7  
Address  
Decode  
Logic  
RAM Array  
and  
(A0, A5 - A17)  
Buffers  
I/O8 - I/O15  
CE1  
CE2  
WE  
OE  
Control  
Logic  
UB  
LB  
Functional Description  
1
UB1  
LB1  
CE1  
CE2  
WE  
OE  
MODE  
POWER  
I/O0 - I/O15  
Standby2  
Standby2  
H
X
L
L
L
L
X
L
H
H
H
H
X
X
X
L
X
X
X
X3  
L
X
X
H
L1  
L1  
L1  
X
X
H
L1  
L1  
L1  
High Z  
High Z  
High Z  
Data In  
Data Out  
High Z  
Standby  
Standby  
Standby  
Active  
Standby  
Write3  
Read  
Active  
H
H
Active  
H
Active  
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally  
isolated from any external influence and disabled from exerting any influence externally.  
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Stock No. 23451-B 2/06  
The specification is ADVANCE INFORMATION and subject to change without notice.  
3
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