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N04M163WL1AB-100I-TR 参数 Datasheet PDF下载

N04M163WL1AB-100I-TR图片预览
型号: N04M163WL1AB-100I-TR
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 256KX16, 100ns, CMOS, PBGA48]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 9 页 / 246 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Timing Test Conditions  
N04M163WL1A  
Item  
0.1VCC to 0.9 VCC  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
5ns  
0.5 VCC  
CL = 30pF  
-40 to +85 oC  
Operating Temperature  
Timing  
2.3 - 3.6 V  
2.7 - 3.6 V  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tRC  
tAA  
Read Cycle Time  
100  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
100  
100  
35  
70  
70  
35  
tCO  
tOE  
tLZ  
Chip Enable to Valid Output  
Output Enable to Valid Output  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Output Hold from Address Change  
Write Cycle Time  
15  
10  
0
10  
5
tOLZ  
tHZ  
30  
30  
0
20  
20  
tOHZ  
tOH  
tWC  
tCW  
tAW  
tWP  
tAS  
0
0
15  
100  
70  
70  
50  
0
10  
70  
50  
50  
40  
0
Chip Enable to End of Write  
Address Valid to End of Write  
Write Pulse Width  
Address Setup Time  
tWR  
tWHZ  
tDW  
tDH  
tOW  
Write Recovery Time  
0
0
Write to High-Z Output  
30  
20  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
50  
0
40  
0
10  
5
ns  
Stock No. 23210-01 11/01/02  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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