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N04L1618C2A 参数 Datasheet PDF下载

N04L1618C2A图片预览
型号: N04L1618C2A
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM CMOS 256Kx16位 [4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 248 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
AW
CE1
t
CW
CE2
t
LBW
, t
UBW
LB, UB
t
AS
WE
t
DW
High-Z
Data In
t
WHZ
Data Out
t
WP
N04L1618C2A
t
WR
t
DH
Data Valid
t
OW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
AW
CE1
(for CE2 Control, use
inverted signal)
LB, UB
t
WP
WE
t
DW
Data In
t
LZ
Data Out
t
WHZ
t
DH
t
CW
t
AS
t
LBW
, t
UBW
t
WR
Data Valid
High-Z
(DOC# 14-02-016 REV G ECN# 01-1266)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.