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N02M0818L2AD 参数 Datasheet PDF下载

N02M0818L2AD图片预览
型号: N02M0818L2AD
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步医疗CMOS SRAM 256Kx8位 [2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 8 页 / 216 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
N02M0818L2A  
Recommended Timing Limits - Read Cycle (Not all inclusive values tested)  
1.3 - 2.3 V  
1.65 - 2.3 V  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tRC  
tAA  
Read Cycle Time  
500  
100  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
500  
500  
200  
100  
100  
50  
tCO  
tOE  
tLZ  
Chip Enable to Valid Output  
Output Enable to Valid Output  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Output Hold from Address Change  
100  
50  
0
20  
10  
0
tOLZ  
tHZ  
tOHZ  
tOH  
150  
150  
30  
30  
0
0
50  
10  
Recommended Timing Limits - Write Cycle (Not all inclusive values tested)  
1.3 - 2.3 V  
1.65 - 2.3 V  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tWC  
tCW  
tAW  
tWP  
tAS  
Write Cycle Time  
Chip Enable to End of Write  
Address Valid to End of Write  
Address Setup Time  
500  
400  
400  
300  
0
85  
50  
50  
40  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Pulse Width  
tWR  
tWHZ  
tDW  
tDH  
Write Recovery Time  
0
0
Write to High-Z Output  
50  
15  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
Output Hold from Address Change  
300  
0
40  
0
tOW  
tOH  
50  
0
10  
0
(DOC#14-02-036 Rev C ECN#01-0887)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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