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N02M0818L1A 参数 Datasheet PDF下载

N02M0818L1A图片预览
型号: N02M0818L1A
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步医疗CMOS SRAM 256Kx8位 [2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 9 页 / 225 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Functional Block Diagram  
N02M0818L1A  
V
CCQ(opt)  
Word  
Address  
Inputs  
Address  
A - A  
Decode  
Logic  
0
3
Input/  
Output  
Mux  
Page  
Address  
Decode  
Logic  
16K Page  
x 16 word  
x 8 bit  
Address  
Inputs  
A - A  
4
17  
and  
I/O - I/O  
0
7
Buffers  
RAM  
CE1  
CE2  
WE  
OE  
Control  
Logic  
Functional Description  
I/O0 - I/O7  
CE1  
CE2  
WE  
OE  
MODE  
POWER  
Standby1  
Standby1  
Write2  
H
X
L
L
L
X
L
X
X
L
X
X
X2  
L
H
High Z  
High Z  
Standby  
Standby  
Active  
H
H
H
Data In  
Data Out  
High Z  
H
H
Active  
Active  
Read  
Active  
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated  
from any external influence and disabled from exerting any influence externally.  
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Stock No. 23208-01 11/01/02  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
2