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N02L083WC2AT2 参数 Datasheet PDF下载

N02L083WC2AT2图片预览
型号: N02L083WC2AT2
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步SRAM CMOS 256K ×8位 [2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 223 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Timing Test Conditions  
N02L083WC2A  
Item  
0.1VCC to 0.9 VCC  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
5ns  
0.5 VCC  
CL = 30pF  
-40 to +85 oC  
Operating Temperature  
Timing  
2.3 - 3.6 V  
2.7 - 3.6 V  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tRC  
tAA  
Read Cycle Time  
70  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
70  
70  
35  
55  
55  
30  
tCO  
tOE  
tLZ  
Chip Enable to Valid Output  
Output Enable to Valid Output  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Output Hold from Address Change  
Write Cycle Time  
10  
5
10  
5
tOLZ  
tHZ  
0
20  
20  
0
15  
15  
tOHZ  
tOH  
tWC  
tCW  
tAW  
tWP  
tAS  
0
0
10  
70  
50  
50  
40  
0
10  
55  
45  
45  
35  
0
Chip Enable to End of Write  
Address Valid to End of Write  
Write Pulse Width  
Address Setup Time  
tWR  
tWHZ  
tDW  
tDH  
tOW  
Write Recovery Time  
0
0
Write to High-Z Output  
20  
15  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
40  
0
35  
0
5
5
ns  
(DOC# 14-02-015 REV E ECN# 01-0998)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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