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N01M0818L1A 参数 Datasheet PDF下载

N01M0818L1A图片预览
型号: N01M0818L1A
PDF下载: 下载PDF文件 查看货源
内容描述: 1MB超低功耗异步医疗CMOS SRAM 128Kx8位 [1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 9 页 / 229 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Timing Test Conditions  
N01M0818L1A  
Item  
0.1VCC to 0.9 VCC  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
5ns  
0.5 VCC  
CL = 30pF  
-40 to +85 oC  
Operating Temperature  
Timing V  
> or = V  
CCQ  
CC  
VCC = 1.4 - 2.3 V  
VCC = 1.7 - 2.3 V  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tRC  
tAA  
Read Cycle Time  
150  
85  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
Chip Enable to Valid Output  
Output Enable to Valid Output  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Output Hold from Address Change  
Write Cycle Time  
150  
150  
50  
85  
85  
40  
tCO  
tOE  
tLZ  
20  
20  
0
10  
5
tOLZ  
tHZ  
30  
30  
0
15  
15  
tOHZ  
tOH  
tWC  
tCW  
tAW  
tWP  
tAS  
0
0
20  
150  
75  
75  
50  
0
10  
85  
50  
50  
40  
0
Chip Enable to End of Write  
Address Valid to End of Write  
Write Pulse Width  
Address Setup Time  
tWR  
tWHZ  
tDW  
tDH  
tOW  
Write Recovery Time  
0
0
Write to High-Z Output  
30  
15  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
50  
0
40  
0
10  
5
ns  
Stock No. 23205-01 11/01/02  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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