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N01L163WC2AB 参数 Datasheet PDF下载

N01L163WC2AB图片预览
型号: N01L163WC2AB
PDF下载: 下载PDF文件 查看货源
内容描述: 1MB超低功耗异步SRAM CMOS [1Mb Ultra-Low Power Asynchronous CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 265 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Power Savings with Page Mode Operation (WE = V )  
N01L163WC2A  
IH  
Page Address (A4 - A15)  
Word Address (A0 - A3)  
Open page  
...  
Word 16  
Word 1  
Word 2  
CE1  
CE2  
OE  
LB, UB  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
(DOC# 14-02-010 REV F ECN# 01-0996)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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