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N01L163WN1AB-55I 参数 Datasheet PDF下载

N01L163WN1AB-55I图片预览
型号: N01L163WN1AB-55I
PDF下载: 下载PDF文件 查看货源
内容描述: 1MB超低功耗异步SRAM CMOS [1Mb Ultra-Low Power Asynchronous CMOS SRAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 10 页 / 261 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Power Savings with Page Mode Operation (WE = V )  
N01L163WN1A  
IH  
Page Address (A4 - A15 )  
Word Address (A0 - A3)  
CE  
Open page  
...  
Word 16  
Word 1  
Word 2  
OE  
LB, UB  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
(DOC# 14-02-011 REV G ECN# 01-1272)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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