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N01L083WC2AN2-55I 参数 Datasheet PDF下载

N01L083WC2AN2-55I图片预览
型号: N01L083WC2AN2-55I
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 55ns, CMOS, PDSO32]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 10 页 / 233 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Power Savings with Page Mode Operation (WE = V )  
N01L083WC2A  
IH  
Page Address (A4 - A16)  
Word Address (A0 - A3)  
Open page  
...  
Word 16  
Word 1  
Word 2  
CE1  
CE2  
OE  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
(DOC# 14-02-008 REV H ECN# 01-1283)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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