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N01L083WC2AT-70I 参数 Datasheet PDF下载

N01L083WC2AT-70I图片预览
型号: N01L083WC2AT-70I
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 70ns, CMOS, PDSO32]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 10 页 / 77 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Functional Block Diagram  
Word  
N01L083WC2A  
Address  
Address  
Decode  
Logic  
Inputs  
A0 - A3  
Input/  
Output  
Mux  
Page  
Address  
8K Page  
x 16 word  
x 8 bit  
Address  
Inputs  
A4 - A16  
Decode  
Logic  
and  
I/O0 - I/O7  
Buffers  
RAM Array  
CE1  
CE2  
WE  
OE  
Control  
Logic  
Functional Description  
I/O - I/O  
CE1  
CE2  
WE  
OE  
MODE  
POWER  
0
7
1
1
H
X
L
L
L
X
L
X
X
L
X
X
High Z  
High Z  
Data In  
Standby  
Standby  
Active  
Standby  
Standby  
2
2
H
H
H
X
Write  
H
H
L
Data Out  
High Z  
Active  
Read  
H
Active  
Active  
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated  
from any external influence and disabled from exerting any influence externally.  
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
Capacitance1  
Item  
Symbol  
Test Condition  
Min  
Max  
8
Unit  
pF  
o
C
Input Capacitance  
I/O Capacitance  
V
V
= 0V, f = 1 MHz, T = 25 C  
IN  
IN  
IN  
A
o
C
8
pF  
= 0V, f = 1 MHz, T = 25 C  
I/O  
A
1. These parameters are verified in device characterization and are not 100% tested  
Stock No. 23033-03 1/02  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
2