Naina Semiconductor Ltd.
emiconductor
Fast Recovery Diodes (Stud Version)
Features
•
Diffused Series
•
Industrial grade
•
Available in Normal and Reverse polarity
•
Optional Avalanche Characteristic
25NSF(R)
Electrical Specifications
(T
E
= 25
0
C, unless otherwise noted)
Symbol
I
F(AV)
V
FM
I
FSM
I
FRM
It
T
rr
2
Parameters
Maximum avg. forward current @ T
E
=
0
150 C
Maximum peak forward voltage drop
@ rated I
F(AV)
Maximum peak one cycle (non-rep)
rep)
surge current @ 10 msec
Maximum peak repetitive surge
current
2
Maximum I t rating (non-rep) for 5 to
rep)
10 msec
Reverse recovery time
Values
25
1.4
250
80
800
300
Units
A
V
A
A
DO-203AB (DO-5)
203AB (DO
A sec
ns
2
Electrical Ratings
(T
E
= 25
0
C, unless otherwise noted)
Type
number
Voltage
Code
10
20
40
60
25NSF(R)
80
100
120
140
160
V
RRM,
Maximum
repetitive peak
reverse voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
V
R(RMS),
Maximum
RMS reverse
voltage
(V)
70
140
280
420
560
700
840
980
1120
V
R,
Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
100
I
R(AV),
Maximum
avg. reverse
leakage current
(µA)
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
4205450
0120
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
