Naina Semiconductor Ltd.
emiconductor
Diode – Diode Module
Features
•
•
•
•
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
25NDD
Maximum Ratings
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum average forward
0
current @ T
J
= 85 C
Maximum average RMS
forward current
Maximum non-repetitive
surge current @ t = 10ms
2
Maximum I t for fusing @ t =
10ms
Symbol
I
F(AV)
I
F(RMS)
I
FSM
It
2
Values
25
39
600
1.4
Units
A
A
A
1
M1 PACKAGE
kA s
2
Thermal & Mechanical Specifications
(T
A
= 25
0
C unless otherwise noted)
Parameter
Operating junction temperature range
Thermal resistance, junction to case
Symbol
T
J
R
th(JC)
Values
-65 to +125
1.0
0
Units
0
C
C/W
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted)
Parameter
Maximum average on-state current, 180 C sinusoidal
Maximum repetitive peak reverse voltage range
Forward voltage drop
RMS isolation voltage
0
Symbol
I
T(max)
V
RRM
V
FM
V
ISO
Values
25
200 to 1600
1.15
2500
Units
A
V
V
V
1
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4205450
0120
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
