Naina Semiconductor Ltd.
emiconductor
Schottky Barrier Rectifier Diode
Features
•
Fast Switching
•
Low forward voltage drop, V
F
•
Guard ring protection
•
High surge capacity
•
High efficiency, low power loss
1N5831
1
Electrical Ratings
(T
C
= 25
0
C, unless otherwise noted)
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Non-repetitive peak reverse
voltage
Average rectified forward current
(T
C
= 85
O
C)
Non-repetitive peak surge current
(surge applied at rated load
conditions, halfwave, single phase,
60 Hz
Symbol
V
RRM
40
V
DC
V
RSM
I
F(AV)
48
25
V
A
V
Values
Units
I
FSM
800
A
DO-203AA (DO
203AA (DO-4)
Maximum Ratings
(T
C
= 25
0
C, unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
Test Conditions
I
F
= 10 A
I
F
= 25 A
I
F
= 78.5 A
T
C
= 25 C
T
C
= 100
O
C
O
Symbol
V
F
Values
0.38
0.48
0.82
20
150
Units
V
V
V
mA
mA
Maximum instantaneous reverse current at rated DC voltage
I
R
Thermal & Mechanical Specifications
(T
E
= 25
0
C, unless otherwise noted)
Parameters
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Mounting torque (non-lubricated threads)
Approximate allowable weight
Symbol
R
th(JC)
T
J
T
stg
W
Values
1.75
-65 to +125
65
-65 to +125
65
15
45.6
Units
0
C/W
C
C
in-lb
g
0
0
NAINA [ NAINA SEMICONDUCTOR LTD. ]
