Naina Semiconductor Ltd.
emiconductor
Thyristor – Thyristor Module
Features
•
•
•
•
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
130NTT
13
Maximum Ratings
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum average forward current @ T
J
=
0
85 C
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
2
Maximum I t for fusing @ t = 10ms
Symbol
I
F(AV)
I
F(RMS)
I
FSM
It
2
Values
130
300
3300
51
Units
A
A
A
kA s
2
M2
Thermal & Mechanical Specifications
(T
A
= 25
0
C unless otherwise noted)
Parameter
Operating junction temperature range
Thermal resistance, junction to case
Symbol
T
J
R
th(JC)
Values
-65 to +1
65 +125
0.18
0
Units
0
C
C/W
Electrical Characteristics
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
I
T(max)
V
RRM
V
FM
I
GT
V
GT
I
H
I
L
dv/dt
V
ISO
Values
130
200 to 1600
1.55
150
2.5
200
300
1000
3500
Units
A
V
V
mA
V
mA
mA
V/µs
V
1
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4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
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