130 MDS
Naina Semiconductor Ltd.
Electrical Specifications (TJ = 250C unless otherwise noted)
Parameters
Maximum DC output current
Conditions
Symbol
Values
130
Units
A
1200 Rect conduction angle, TC = 850C
I0
t = 10ms
t = 8.3ms
t = 8.3ms
t = 10ms
T = 8.3ms
T = 10ms
T = 8.3ms
T = 10ms
1130
1180
950
No voltage
reapplied
Maximum peak one-cycle forward,
non-repetitive surge current
IFSM
A
100% VRRM
reapplied
1000
6400
5800
4500
4100
64000
TJ = TJ max.
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100% VRRM
reapplied
Maximum J2√t for fusing
T = 0.1 to 10ms, no voltage reapplied
J2√t
A2√s
Low level value of threshold voltage [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max
VF(TO)1
0.78
0.99
4.59
4.17
1.63
4000
V
High level value of threshold
[ I > π > IF(AV) ], @ TJ max
voltage
VF(TO)2
V
mΩ
mΩ
V
Low level value of forward slope
[ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max
resistance
r1
High level value of forward slope
[ I > π * IF(AV) ], @ TJ max
resistance
r2
Maximum forward voltage drop
RMS isolation voltage
Ipk = 100A, tP = 400 µs single junction
f = 50Hz, t = 1ms, all terminals shorted
VFM
VISO
V
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India
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Tel: 0120-4205450
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Fax: 0120-4273653
sales@nainasemi.com
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www.nainasemi.com