12F/12FR
12AMP SILICON POWER DIODE
DO-4
FEATURES
• All Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
* Available in metric and UNF thread
ELECTRICAL SPECIFICATIONS
12F/FR
NAINA
12F/ 12FR
4
19
11.5
M6 x 1.0
A
12A
1.2V
250 A
60 A
250A
2
Sec
C
A
FR
11A/F
I
F
(
A
)
Maximum Average Forward
Current Te=150
0
C
V
FM
Maximum peak forward
voltage drop @ Rated I
F(AV)
I
FSM
Maximum peak one cycle
(non-rep) surge current 10msec
I
FRM
Maximum peak one cycle (non
-rep) surge current 10msec
2
t
I
Maximum I
2
t rating (non-rep.)
for 5 to 10 m sec.
F
C
10
THERMAL MECHANICAL SPECIFICATIONS
θ
JC
T
J
T
stg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque (non-lubricated threads)
Approx, weight
2
o
C/W
-65
o
C to 150
o
C
-65
o
C to 150
o
C
0.14 M-Kg min, 0.17 M-kg max
7 gms.
ELECTRICAL RATINGS
TYPE
V
RRM
12F/12FR
Max. repetitive peak
voltage (v)
10
100
70
100
40
100
20
200
140
200
80
100
40
400
280
400
160
100
60
600
420
60
240
100
80
800
560
800
320
100
100
1000
700
1000
400
100
120
1200
840
1200
480
100
140
160
1400 1600
980
1120
V
R
(RMS)
V
R
Max. R.M.S. reverse voltage (V)
Max. D.C. Blocking Voltage (V)
Recommended R.M.S. working
Voltage(v)
Max. Average reverse leakage
current @ VRMM Tc 25
0
C uA
1400 1600
560
100
640
100
I
R
(AV)
NAINA SEMICONDUCTOR LTD.
D95,SECTOR 63 NOIDA(INDIA)
e-mail : sales@nainasemi.com, web site : www.nainasemi.com