Naina Semiconductor Ltd.
Features
•
•
•
•
Diffused Series
High Current Surge Capability
Available in Normal and Reverse polarity
Metric and UNF thread type
125NS(R)
Standard Recovery Diodes (Stud and Flat Base Type), 125A
Electrical Specifications
(T
A
= 25
o
C, unless otherwise noted)
Symbol
I
F(AV)
V
FM
I
FSM
I
2
t
Parameters
Maximum avg. forward current @ T
A
= 150
o
C
Maximum peak forward voltage drop @
rated I
F(AV)
Maximum peak one cycle (non-rep) surge
current @ 10 msec
Maximum I
2
t rating (non-rep) for 5 to 10
msec
Values
125
1.3
2600
30000
Units
A
V
A
A
2
sec
DO-205AA (DO-8)
Voltage Ratings
(T
A
= 25
o
C, unless otherwise noted)
Type
number
Voltage
Code
10
20
40
60
80
100
120
140
160
V
RRM,
Maximum
repetitive peak
reverse voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
V
R(RMS),
Maximum
RMS reverse
voltage
(V)
70
140
280
420
560
700
840
980
1120
V
R,
Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
I
R(AV),
Maximum
avg. reverse
leakage current
(µA)
125NS(R)
200
Thermal & Mechanical Specifications
(T
A
= 25
o
C, unless otherwise noted)
Symbol
R
th(JC)
T
J
T
stg
F
W
Parameters
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Mounting torque (non-lubricated threads)
Approximate allowable weight
Values
0.3
-65 to 150
-65 to 200
2.0 (min) – 3.0 (max)
150
o
Units
C/W
o
C
o
C
G
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
