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110MDS 参数 Datasheet PDF下载

110MDS图片预览
型号: 110MDS
PDF下载: 下载PDF文件 查看货源
内容描述: - 三相桥式整流器出色的功率体积比 [Three - Phase Bridge Rectifier Excellent power volume ratio]
分类和应用:
文件页数/大小: 3 页 / 524 K
品牌: NAINA [ NAINA SEMICONDUCTOR LTD. ]
 浏览型号110MDS的Datasheet PDF文件第1页浏览型号110MDS的Datasheet PDF文件第3页  
Naina Semiconductor Ltd.
Electrical Specifications
(T
J
= 25
0
C unless otherwise noted)
Parameters
Maximum DC output current
Maximum peak one-cycle forward,
non-repetitive surge current
110 MDS
Conditions
120 Rect conduction angle, T
C
= 85 C
t = 10ms
t = 8.3ms
t = 8.3ms
t = 10ms
T = 8.3ms
T = 10ms
T = 8.3ms
T = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
0
0
Symbol
I
0
Values
110
950
1000
800
840
4500
4100
3200
2900
45000
0.81
Units
A
I
FSM
T
J
= T
J
max.
It
2
A
Maximum I t for fusing
2
As
2
Maximum J √t for fusing
Low level value of threshold voltage
High level value of threshold
voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
Maximum forward voltage drop
2
T = 0.1 to 10ms, no voltage reapplied
[ 16.7% * π * I
F(AV)
< I < π * I
F(AV)
], @ T
J
max
[ I > π > I
F(AV)
], @ T
J
max
J √t
V
F(TO)1
V
F(TO)2
2
A √s
V
2
0.99
V
[ 16.7% * π * I
F(AV)
< I < π * I
F(AV)
], @ T
J
max
[ I > π * I
F(AV)
], @ T
J
max
I
pk
= 100A, t
P
= 400 µs single junction
f = 50Hz, t = 1ms, all terminals shorted
r
1
r
2
V
FM
V
ISO
4.37
mΩ
4.64
mΩ
1.4
V
RMS isolation voltage
4000
V
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com