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GRM2195C1H562JA01D 参数 Datasheet PDF下载

GRM2195C1H562JA01D图片预览
型号: GRM2195C1H562JA01D
PDF下载: 下载PDF文件 查看货源
内容描述: 片状独石陶瓷电容器 [Chip Monolithic Ceramic Capacitors]
分类和应用: 电容器陶瓷电容器
文件页数/大小: 221 页 / 4341 K
品牌: MURATA [ MURATA MANUFACTURING CO., LTD. ]
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• This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
• This PDF catalog has only typical and Test Methods has only typical space for detailed specifications. Therefore, please approve our product specifications approve our product specificationsproduct specifications before ordering.
2. This Specifications specifications because there is no specifications because there is no space for detailed specifications. Therefore, please or transact the approval sheet for or transact the approval sheet for product
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specifications before ordering.
10.12.20
GMD Series Specifications and Test Methods (1)
For General
GRM Series
When no "*" is added in PNs table, please refer to GMD Series Specifications and Test Methods (1).
When "*" is added in PNs table, please refer to GMD Series Specifications and Test Methods (2).
No.
Item
Operating
Temperature
Range
Specifications
Test Method
1
R7 : –55°C to 125°C
Reference Temperature : 25°C
The rated voltage is defined as the maximum voltage that may
be applied continuously to the capacitor.
When AC voltage is superimposed on DC voltage, V
P-P
or V
O-P
,
whichever is larger, should be maintained within the rated volt-
age range.
Visual inspection.
Using calipers.
No failure should be observed when 250% of the rated voltage
is applied between the terminations for 1 to 5 seconds, provid-
ed the charge/discharge current is less than 50mA.
The insulation resistance should be measured with a DC
voltage not exceeding the rated voltage at normal temperature
and humidity and within 2 minutes of charging.
The capacitance/D.F. should be measured at reference
temperature at the frequency and voltage shown in the table.
Frequency
Voltage
1±0.1kHz
1±0.2Vrms
Array
GNM Series
2
Rated Voltage
See the previous pages.
3
4
5
Appearance
Dimensions
Dielectric Strength
No defects or abnormalities.
Within the specified dimensions.
No defects or abnormality.
Low ESL
LLp Series
6
7
8
Insulation
Resistance
Capacitance
Dissipation
Factor (D.F.)
More than 10,000MΩ or 500Ω · F
(whichever is smaller)
Within the specified tolerance.
R7 :
W.V. 25Vmin. : 0.025 max.
W.V. 16/10V : 0.035 max.
The capacitance change should be measured after 5 min. at
each specified temp. stage.
High-Q
GJM Series
The ranges of capacitance change compared with the
Reference Temperature value over the temperature ranges
shown in the table should be within the specified ranges.*
9
Capacitance
Temperature
Characteristics
No bias
R7 : Within
±15%
(–55°C to +125°C)
Step
1
2
3
4
Temperature (°C)
25±2
–55±3
25±2
125±3
High Frequency
GQM Series
*Initial measurement for high dielectric constant type
Perform a heat treatment at 150 +0/–10°C for one hour and
then let sit for 24±2 hours at room temperature.
Perform the initial measurement.
Bond
Pull force : 0.03N min.
Strength
10
Mechanical
Strength
Die Shear
Die Shear force : 2N min.
Strength
Appearance
No defects or abnormalities.
Vibration
11
Resistance
Capacitance
Within the specified tolerance.
D.F.
R7 :
W.V. 25Vmin. : 0.025 max.
W.V. 16/10V : 0.035 max.
Ramp frequency from 10 to 55Hz then return to 10Hz all within
1 minute. Amplitude: 1.5 mm (0.06 inch) max. total excursion.
Apply this motion for a period of 2 hours in each of 3 mutually
perpendicular directions (total 6 hours).
The capacitor should be set for 24±2 hours at room
temperature after one hour of heat treatment at 150+0/–10°C,
then measure for the initial measurement. Fix the capacitor to
the supporting jig in the same manner and under the same
conditions as (11) and conduct the five cycles according to the
temperatures and time shown in the following table. Set it for
24±2 hours at room temperature, then measure.
1
Min.
Temp. (°C) Operating
Temp.+0/–3
Time (min.)
30+/–3
Step
2
Room
Temp.
2 to 3
3
Max.
Operating
Temp. +3/–0
30+/–3
4
Room
Temp.
2 to 3
MIL-STD-883 Method 2011 Condition D
Mount the capacitor on a gold metallized alumina substrate with
Au-Sn (80/20) and bond a 25mm (0.001 inch) gold wire to the
capacitor terminal using an ultrasonic ball bond. Then, pull wire.
MIL-STD-883 Method 2019
Mount the capacitor on a gold metallized alumina substrate
with Au-Sn (80/20). Apply the force parallel to the substrate.
Monolithic Microchip
GMA Series
Appearance
No defects or abnormalities.
For Bonding
GMD Series
Capacitance
R7 : Within
±7.5%
Change
D.F.
R7 :
W.V. 25Vmin. : 0.025 max.
W.V. 16/10V : 0.035 max.
More than 10,000MΩ or 500Ω · F
(whichever is smaller)
No defects
12
Temperature
Cycle
I.R.
Product Information
Dielectric
Strength
Mounting for testing: The capacitors should be mounted on the substrate as shown below using die bonding. when tests No. 11 to 15 are performed.
Continued on the following page.
124