MSK4203HU 参数 Datasheet PDF下载

ELECTRICAL SPECIFICATIONS

Parameter

OUTPUT CHARACTERISTICS

VDS (ON) Voltage (Each Mosfet)

I

D

=10A

Instantaneous Forward Voltage

(Each Intrinsic Diode)

RDS (ON) (Each Mosfet)

2 6

Leakage Current, Each Mosfet

V+=75V

PWM Frequency

V

CC

SUPPLY CHARACTERISTICS

Quiescent Current

+5V Output

OUTPUT DUTY CYCLE

V

IN

=6V (Both Outputs)

V

IN

=9.5V

A

OUT

=100% Duty Cycle

B

OUT

=0% Duty Cycle

V

IN

=2.5V

A

OUT

=0% Duty Cycle

B

OUT

=100% Duty Cycle

Analog Input Current

2

SWITCHING CHARACTERISTICS

2

Rise Time

Fall Time

Dead Time

LOGIC CONTROL INPUTS

2

V

DIS

=LOW

DIS Input

V

DIS

=HIGH

Input Current (High or Low)

V

HEN

=LOW

HEN Input

V

HEN

=HIGH

Input Current (High or Low)

1,2,3

1,2,3

1,2,3

1,2,3

1,2,3

1,2,3

-

2.7

-

-

2.7

-

-

-

-

-

-

-

0.8

-

150

0.8

-

300

-

2.7

-

-

2.7

-

-

-

-

-

-

-

0.8

-

150

0.8

-

300

V

V

µAmp

V

V

µAmp

R

L

=1KΩ

4

4

4

-

-

-

TBD

TBD

TBD

TBD

TBD

TBD

-

-

-

TBD

TBD

TBD

TBD

TBD

TBD

µSec

µSec

µSec

-

-

-

5

-

-

5

µAmp

7

-

-

-

-

-

-

P/F

7

-

-

-

-

-

-

P/F

4,5,6

40

50

60

40

50

60

%

V

IN

=6V

I

OUT

=0mA

I

OUT

=100mA

1,2,3

1,2,3

1,2,3

-

4.9

4.85

25

5.0

5.0

45

5.1

5.15

-

4.85

4.8

25

5.0

5.0

50

5.15

5.2

mA

V

V

I

S

=10A

I

D

=10A

T

C

=125°C

1

2

3

1

2

3

-

1

2

3

4,5,6

-

-

-

-

-

-

-

-

-

-

40

0.5

1.0

0.2

1.1

1.2

1.0

0.07

25

100

25

45

1.0

2.0

1.0

1.8

1.9

1.8

0.13

50

500

50

50

-

-

-

-

-

-

-

-

-

-

40

0.5

-

-

1.1

-

-

0.07

25

-

-

45

1.2

-

-

2.0

-

-

0.13

100

-

-

50

V

V

V

V

V

V

Ω

µA

µA

µA

KHz

Test Conditions

1

Group A

Subgroup

4

MSK4203H/E

3 5

Min.

Typ.

Max.

MSK4203

5

Min.

Typ.

Max.

Units

NOTES:

V

CC

=

12V

,

V+=28V

,

R

SENSE

A,B=Ground, DIS=OV, HEN=NC unless otherwise specified.

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

Devices shall be 100% tested to subgroups 1,2,3 and 4. Subgroup 5 and 6 testing available upon request.

Subgroup 1,4,7

T

A

=T

C

=

+25°C

2,5

T

A

=T

C

=

+125°C

3,6

T

A

=

T

C

=

-55°C

5 Industrial grade and "E" suffix devices shall be 100% tested at 25°C only.

6 The internal on resistance is for the die only. This should be used for thermal calculations only.

1

2

3

4

2

22

Rev. A 10/02