ABSOLUTE MAXIMUM RATINGS
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
7.9°C/W
ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance 2
Drain-Source On Resistance 3
Forward Transconductance
N-Channel (Q2,Q3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Rise Time
Fall Time
1
1
1
1
1
1
1
1
1
I
D
=9.0A
V
DS
=80V
V
GS
=10V
V
DD
=50V
I
D
=9.0A
R
G
=12Ω
R
D
=5.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
I
D
=-8.4A
V
DS
=-80V
V
GS
=-10V
V
DD
=-50V
I
D
=-8.4A
1
1
1
R
G
=9.1Ω
R
D
=6.2Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
I
S
=9.0A V
GS
=0V (Q2,Q3)
I
S
=-8.4A V
GS
=0V (Q1,Q4)
1
1
I
S
=9.0A di/dt=100A/µS (Q2,Q3)
I
S
=-8.4A di/dt=100A/µS (Q1,Q4)
I
S
=9.0A di/dt=100A/µS (Q2,Q3)
I
S
=-8.4A di/dt=100A/µS (Q1,Q4)
1
Test Conditions
4
V
GS
=0 I
D
=0.25mA (All Transistors)
V
DS
=100V V
GS
=0V (Q2,Q3)
V
DS
=-100V V
GS
=0V (Q1,Q4)
V
GS
=±20V V
DS
=0 (All Transistors)
V
DS
=V
GS
I
D
=250µA (Q2,Q3)
V
DS
=V
GS
I
D
=250µA (Q1,Q4)
V
GS
=10V I
D
=9.0A (Q2,Q3)
V
GS
=-10V I
D
=-8.4A (Q1,Q4)
V
GS
=10V I
D
=9.0A (Q2,Q3)
V
GS
=10V I
D
=-8.4A (Q1,Q4)
V
DS
=50V I
D
=9.0A (Q2,Q3)
V
DS
=-50V I
D
=-8.4A (Q1,Q4)
MSK3014
Min.
100
-
-
-
2.0
2.0
-
-
-
-
6.4
3.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.4
27
37
25
640
160
88
-
-
-
15
58
45
46
760
260
170
1.3
-1.6
130
130
650
650
Max.
-
25
-25
±100
4.0
4.0
0.20
0.28
0.11
0.20
-
-
44
6.2
21
-
-
-
-
-
-
-
58
8.3
32
-
-
-
-
-
-
-
-
-
190
190
970
970
Units
V
µA
µA
nA
V
V
Ω
Ω
Ω
Ω
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
µC
µC
Turn-On Delay Time 1
Turn-Off Delay Time
Input Capacitance
Output Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time
Fall Time
1
1
Turn-Off Delay Time
Input Capacitance
Output Capacitance
BODY DIODE
Forward On Voltage
1
Reverse Transfer Capacitance
Reverse Transfer Capacitance 1
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
1
2
3
4
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
Rev. B 7/00
T
A
=25°C unless otherwise specified.
2
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
I
D
I
DM
R
TH-JC
○
○
○
○
○
○
○
○
±20V MAX
10A MAX
25A MAX
○
○
○
○
○
○
○
○
○
○
V
GS
T
J
T
ST
T
C
T
LD
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
100V MAX
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
V
DSS
V
DGDR
Drain to Source Voltage
Drain to Gate Voltage
(R
GS
=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)
○
○
○
○
○
○
○
○
○
○
○
○
○
100V MAX
Single Pulse Avalanche Energy
(Q2,Q4,Q6)
7.9mJ
(Q1,Q3,Q5)
7.9mJ
Junction Temperature
+175°C MAX
Storage Temperature
-55°C to +150°C
Case Operating Temperature Range -55°C to +125°C
Lead Temperature Range
(10 Seconds)
300°C MAX
MSK [ M.S. KENNEDY CORPORATION ]
