MP18021―100V HIGH FREQUENCY HALF-BRIDGE GATE DRIVER
ELECTRICAL CHARACTERISTICS
V
DD
= V
BST
-V
SW
=12V, V
SS
=V
SW
= 0V, No load at DRVH and DRVL, T
A
= +25C, unless otherwise
noted.
Parameter
Symbol Condition
Supply Currents
VDD quiescent current
I
DDQ
INL=INH=0
VDD operating current
I
DDO
fsw=500kHz
Floating driver quiescent current
I
BSTQ
INL=INH=0
Floating driver operating current
I
BSTO
fsw=500kHz
Leakage Current
I
LK
BST=SW=100V
Inputs
INL/INH High
INL/INH Low
INL/INH
internal
pull-down
R
IN
resistance
Under Voltage Protection
VDD rising threshold
V
DDR
VDD hysteresis
V
DDH
(BST-SW) rising threshold
V
BSTR
(BST-SW) hysteresis
V
BSTH
Bootstrap Diode
Bootstrap diode VF @ 100uA
V
F1
Bootstrap diode VF @ 100mA
V
F2
Bootstrap diode dynamic R
R
D
@ 100mA
Low Side Gate Driver
Low level output voltage
V
OLL
I
O
=100mA
High level output voltage to rail
V
OHL
I
O
=-100mA
V
DRVL
=0V, V
DD
=12V
Peak pull-up current
I
OHL
V
DRVL
=0V, V
DD
=16V
V
DRVL
=V
DD
=12V
Peak pull-down current
I
OLL
V
DRVL
=V
DD
=16V
Floating Gate Driver
Low level output voltage
V
OLH
I
O
=100mA
High level output voltage to rail
V
OHH
I
O
=-100mA
V
DRVH
=0V, V
DD
=12V
Peak pull-up current
I
OHH
V
DRVH
=0V, V
DD
=16V
V
DRVH
=V
DD
=12V
Peak pull-down current
I
OLH
V
DRVH
=V
DD
=16V
Min
Typ
100
2.8
60
2.1
0.05
2
1.4
185
7.7
6.7
8.1
0.5
7.1
0.55
0.5
0.9
2.5
0.15
0.45
1.5
2.5
2.5
3.5
0.15
0.45
1.5
2.5
2.5
3.5
0.22
0.6
8.5
7.5
Max
150
3.5
90
3
1
2.4
Units
µA
mA
µA
mA
A
V
V
k
V
V
V
V
V
V
V
V
A
A
A
A
V
V
A
A
A
A
1
0.22
0.6
MP18021 Rev. 1.11
www.MonolithicPower.com
10/20/2015
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2015 MPS. All Rights Reserved.
3
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