LN60A01 – 600V, N-CHANNEL MOSFET
ORDERING INFORMATION
Part Number*
LN60A01EP
Package
PDIP-8
Top Marking
LN60A01E
Free Air Temperature (TA)
-20ºC to 85ºC
Part Number**
Package
Top Marking
Free Air Temperature (TA)
LN60A01ES
SOIC-8
LN60A01E
-20ºC to 85ºC
*For RoHS compliant packaging, add suffix –LF (e.g. LN60A01EP–LF)
** For Tape & Reel, add suffix –Z (e.g. LN60A01ES–Z).
For RoHS compliant packaging, add suffix –LF (e.g. LN60A01ES–LF–Z)
PACKAGE REFERENCE
TOP VIEW
TOP VIEW
S1
S2
1
2
3
4
8
7
6
5
D1
S1
S2
1
2
3
4
8
7
6
5
D1
D2
D2
Gate
S3
D3
Gate
S3
D3
GND
GND
PDIP-8
SOIC-8
ABSOLUTE MAXIMUM RATINGS (1)
Drain-Source Voltage VDS .......................... 600V
Recommended Operating Conditions
Operating Junct. Temp (TJ)..... –20°C to +125°C
Thermal Resistance (3)
θJA
θJC
Gate-Source Voltage VGS……………………..15V
Continuous Drain Current (1) ID .................. 0.08A
SOIC8 ........................................90 ... 45... °C/W
PDIP8 ....................................105... . 45. .°C/W
(2)
Pulsed Drain Current
I
......................... 0.4A
DM
Power Dissipation (1) (2) PD.......................... 1.3W
Storage Temperature.............. –55°C to +150°C
Notes:
1) Surface Mounted on 1”×1” FR4 Board..
2) Pulse width limited by maximum junction temperature.
3) Measured on JESD51-7, 4-layer PCB
LN60A01EP Rev. 0.91
1/15/2010
www.MonolithicPower.com
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