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HFC0100HS 参数 Datasheet PDF下载

HFC0100HS图片预览
型号: HFC0100HS
PDF下载: 下载PDF文件 查看货源
内容描述: 准谐振控制器 [QUASI RESONANT CONTROLLER]
分类和应用: 控制器
文件页数/大小: 15 页 / 290 K
品牌: MPS [ MONOLITHIC POWER SYSTEMS ]
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HFC0100QUASI RESONANT CONTROLLER  
Burst Operation  
Current Limit Setting  
To minimize the power dissipation in no load or  
light load, the HFC0100 enters the burst mode  
operation. As the load decreases, the FB voltage  
decreases,, the HFC0100 stops the switching  
cycle when the FB voltage drops below the  
threshold VBURL—0.5V. And the output voltage  
starts to drop at a rate dependent on the load.  
This causes the FB voltage to rise again. Once  
The switch current is sensed by the resistor  
series between the Source of the FET and the  
ground. And the current limit is determined by the  
VFB VFB  
FB signal, VLimit  
=
=
. To limit the  
Idiv  
3
maximum output power, the current limit is  
clamped at 1V when VFB is bigger than 3.3V.  
Leading Edge Blanking  
the FB voltage exceeds the threshold VBURH  
0.7V, switching resumes. The FB voltage then  
falls and rises repeatedly. The burst mode  
operation alternately enables and disables  
switching cycle of the MOSFET thereby reducing  
switching loss in the no load or light load  
conditions.  
In order to avoid the premature termination of the  
switching pulse due to the parasitic capacitance,  
an internal leading edge blanking (LEB) unit is  
employed between the CS Pin and the current  
comparator input. During the blanking time, the  
path, CS Pin to the current comparator input, is  
blocked. Figure 9 shows the leading edge  
blanking.  
Figure 8 shows the typical FB and Drive  
waveform during the burst mode.  
VBURH:0.7V  
VLimit  
VBURL:0.5V  
TLEB=250nS  
V
FB  
200mV/div  
V
Drive  
5V/div  
40us/div  
t
Figure 8—Burst Mode  
Thermal Shutdown (TSD)  
To prevents from any lethal thermal damage. The  
HFC0100 shuts down switching cycle when the  
inner temperature exceeds 150DegC. As soon as  
the inner temperature drops below 100DegC, the  
power supply resumes operation.  
Figure 9—Leading Edge Blanking  
Over Power Compensation  
In the case of current sensing, shows as figure  
10, the turn off of the FET is delayed due to the  
propagation delay of the control circuit, the delay  
time is the inherent characteristic of the control  
circuit, so Tdelay can be seen fixed. This delay will  
cause an overshoot of the peak current. I2 is  
bigger than I1 due to the bigger rising ratio(the  
higher input voltage, the bigger rising ratio).  
Soft-Start  
To reduce the stress on primary MOSFET and  
secondary diode during start up, to smoothly  
establish the output voltage, the HFC0100 has  
an internal soft-start circuit that increases the  
current comparator inverting input voltage,  
together with the MOSFET current, slowly after it  
starts up. The pulse width to the power switching  
device is progressively increased to establish the  
correct working conditions for transformers,  
inductors, and capacitors.  
HFC0100 Rev. 1.01  
9/23/2011  
www.MonolithicPower.com  
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.  
© 2011 MPS. All Rights Reserved.  
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