HF01B00/01/02/03/04–OFF LINE HIGH VOLTAGE QUASI RESONANT REGULATOR
ELECTRICAL CHARACTERISTICS
VCC =12V, TA=+25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Start-up Current Source (Pin D)
VCC =6V;
VD=400V
VCC =13V;
VD=400V
Supply current from Pin D
Leakage current from Pin D
Icharge
1.4
2
2.6
mA
Ileak
20
μA
Break Down Voltage
HF01B00
V(BR)DSS
700
--
V
1.9
3.3
5.5
7.7
11
HF01B01
VCC =10V;
ID=100mA
On-State Resistance
HF01B02
HF01B03
HF01B04
RDS(ON)
Ω
Supply Voltage Management (Pin Vcc)
VCC Upper Level at which the Internal
High Voltage Current Source Stops
VCC Lower Level at which the Internal
High Voltage Current Source Triggers
VCC Decreasing Level at which the
Latchoff Phase Ends
VCCH
VCCL
10.6
7.2
11.8
8
13
V
V
8.8
Vcclatch
ILatch
5.5
400
V
Internal IC Consumption, Latchoff Phase
VCC =6.0V
μA
Feedback Management (Pin FB)
Internal Pull Up Resistor
Internal Pull Up Voltage
Pin8 to Current Set point Division Ratio
Internal Soft-Start Time
FB Decreasing Level at which the
Regulator enter the Burst Mode
FB Increasing Level at which the
Regulator leave the Burst Mode
Over Load Set Point
RFB
Vup
Idiv
10
4.5
3.3
2.4
kΩ
V
Tss
ms
V
VBURL
0.5
VBURH
VOLP
0.7
3.7
V
V
Valley Switching Detector (Pin VSD)
Valley Point Detection Threshold Voltage
Valley Point Detection Hysteresis
VVSD
Vhys
30
45
10
60
mV
mV
VVSDH
High
Ipin=3.0mA
Low State
Ipin=-2.0mA
Pull down from
2V to -100mV
State
7
7.8
-0.65
150
8.6
-0.5
210
V
V
Pin VSD Clamp Voltage
VVSDL
TVSD
-0.8
90
Valley Point Detection Delay
ns
Parasitical Capacitance at Pin VSD
Minimum Off Time
Cpar
Tmin
10
7.8
pF
μs
6.6
9
Re-start time After Last Valley Point
Detection Transition
Trestart
4.6
μs
OVP Sampling Delay
Pin VSD OVP reference level
Internal Impedance
TOVPS
VOVP
Rint
3.5
6
24
μs
V
kΩ
Current Sampling Management (Pin S)
Leading Edge Blanking
Maximum current set-point
TLEB
VCS
320
1
ns
V
HF01B00/01/02/03/04 Rev. 1.2
www.MonolithicPower.com
4
4/9/2013
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