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MP4TD0900W 参数 Datasheet PDF下载

MP4TD0900W图片预览
型号: MP4TD0900W
PDF下载: 下载PDF文件 查看货源
内容描述: 硅双极MMIC放大器级联 [Silicon Bipolar MMIC Cascadable Amplifier]
分类和应用: 放大器
文件页数/大小: 3 页 / 137 K
品牌: MPLUSE [ M-PULSE MICROWAVE INC. ]
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Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0900
Typical Bias Configuration
Rbias
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
2,3
Power Dissipation
750 mW
RF Input Power
+20 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance:
θ
jms
= 70°C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25
°C.
3. Derate at 14.3 mW/°C for TMS > 147°C
Id =
Vcc - Vd
Rbias
Vcc >10 V
RFC (Optional)
4
C (DC Block)
IN
1
MP4TD0900
C (DC Block)
3
OUT
Vd = 7.8 V
2
Typical Performance Curves @ Id = 35 mA, TA = +25°C (unless otherwise noted)
(Performance Required 45 pF Feedback Capacitor)
DEVICE CURRENT vs DEVICE VOLTAGE
RETURN LOSS vs FREQUENCY
60
Id, DEVICE CURRENT (mA)
50
40
30
20
10
0
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
Input
O utput
0
2
4
6
8
10
0.1
Vd, D EVICE VO L TAG E (V)
1
FRE Q UE N CY (G H z)
10
9
8
GAIN (dB)
7
6
5
4
POWER GAIN vs CURRENT
16
f= 0.1 G H z
P
OUT
- 1dB (dBm)
f= 2.0 G H z
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
14
12
10
8
6
4
2
0
0. 1
1
FRE Q UE N CY (G H z)
10
Id= 45m A
Id= 35m A
Id=25m A
10
20
30
Id, DE VICE CU RR E NT (m A)
40
50
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
2
FX (408) 432-3440